shottky barrier diode rb491d ? application ? dimensions (unit : mm) ? lead size figure (unit : mm) low current rectification 1) small mold type. (smd3) 2) low i r 3) high reliability. ? structure silicon epitaxial planar ? structure ? taping dimensions (unit : mm) ? absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions v f - - 0.45 v i f =1a i r - - 200 a v r =20v parameter junction temperature storage temperature (*1) rating of per diode 25 forward current surge peak (60hz ?1cyc) (*1) 3 125 ? 40 to ? 125 ? features forward voltage reverse current limits 20 1 parameter reverse voltage (dc) average rectified forward voltage (*1) reverse voltage (repetitive peak) smd3 1.0min. 0.8min. 2.4 0.95 1.9 3.20.1 4.00.1 4.00.1 2.00.05 1.50.1 0 3.50.05 1.750.1 8.00.2 1.350.1 3.20.1 1.05min 3.20.1 0.30.1 5.50.2 00.5 jeita : sc-59 jedec :s0t-346 0.4 0.1 0.06 2.90.2 2.80.2 1.90.2 1.6 0.2 0.1 0.95 0.95 0.1 0.05 `?? ? 00.1 0.15 1.10.2 0.01 0.80.1 (2) (1) (3) 0.30.6 1.1 ? 0. 2 ? 0. 1 each lead has same dimension rohm : smd3 week code 1/3 2011.03 - rev.d data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb491d 1 10 100 1000 0 5 10 15 20 25 30 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 ta=125 ta=75 ta=25 ta=-25 0 5 10 15 20 ave:9.3ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) f=1mhz 380 390 400 410 420 ta=25 if=1a n=30pcs ave:399.2m 0 50 100 150 200 250 300 350 400 450 500 ta=25 vr=20v n=30pcs ave:37.93ua 100 110 120 130 140 150 160 170 180 190 200 ave:159.8pf ta=25 f=1mhz vr=0v n=10pcs 0 10 20 30 ave:11.1a 8.3ms ifsm 1cyc 0 5 10 15 20 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 5 10 15 20 1 10 100 t ifsm 1 10 100 1000 0.001 0.1 10 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time 0 0.5 1 0 0.5 1 1.5 2 per chip dc d=1/2 sin(?180) 0.001 0.01 0.1 1 0 100 200 300 400 500 600 ta=-25 ta=125 ta=75 ta=25 mounted on epoxy board 2/3 2011.03 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb491d reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.05 0.1 0.15 0.2 0.25 0.3 0 5 10 15 20 per chip 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 per chip 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 sin(?180) dc per chip sin(?180) dc d=1/2 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=10 v 0 a 0v t tj=125 d=t/t t vr io vr=10 v 0 a 0v d=1/2 3/3 2011.03 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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